topic

TiN Cu-diffusion barrier

TiN Cu 확산 방지막

인터커넥트 내 Cu 확산을 차단하는 TiN 기반 다층 방지막(TiN/Al/TiN, TiN/M/TiN)으로, 결정립계 채움(grain-boundary stuffing)은 파괴 온도를 높이는 반면 유리 Al은 Cu 수송을 가속화하며 Cu₃Si 실리사이드 형성은 방지막 파괴의 지표가 된다.

구성 페이지 (7)

묶인 페이지 (7)

TiN/Al/TiN trilayer Cu diffusion barrier TiN/M/TiN multilayer Cu diffusion barrier (M = Zr/Cr/Ru)Aluminum interlayer (TiN/Al/TiN barrier)eta-prime-Cu3Si (barrier-failure silicide)Grain-boundary stuffing (oxide stuffing of TiN barrier)Free-Al-accelerated Cu diffusion (barrier failure mode)Diffusion-barrier failure temperature

로컬 그래프 (7 연결)

드래그·휠로 탐색 · 노드 호버 → 관계 · 클릭 → 페이지

나가는 연결 (0)

없음

역링크 (7)

← part_of

TiN/Al/TiN trilayer Cu diffusion barrier

member of umbrella TiN-Cu-diffusion-barrier

← part_of

TiN/M/TiN multilayer Cu diffusion barrier (M = Zr/Cr/Ru)

member of umbrella TiN-Cu-diffusion-barrier

← part_of

Aluminum interlayer (TiN/Al/TiN barrier)

member of umbrella TiN-Cu-diffusion-barrier

← part_of

eta-prime-Cu3Si (barrier-failure silicide)

member of umbrella TiN-Cu-diffusion-barrier

← part_of

Grain-boundary stuffing (oxide stuffing of TiN barrier)

member of umbrella TiN-Cu-diffusion-barrier

← part_of

Free-Al-accelerated Cu diffusion (barrier failure mode)

member of umbrella TiN-Cu-diffusion-barrier

← part_of

Diffusion-barrier failure temperature

member of umbrella TiN-Cu-diffusion-barrier